Solid-state image pickup element and electronic apparatus

ABSTRACT

The present technique relates to a solid-state image pickup element and an electronic apparatus each of which enables a pad to be formed in a shallow position while reduction of a quality of a back side illumination type solid-state image pickup element is suppressed. The solid-state image pickup element includes a pixel substrate in which a light condensing layer for condensing incident light on a photoelectric conversion element, a semiconductor layer in which the photoelectric conversion element is formed, and a wiring layer in which a wiring and a pad for outside connection are formed are laminated on one another, and at least a part of a first surface of the pad is exposed through a through hole completely extending through the light condensing layer and the semiconductor layer. The present technique, for example, can be applied to a back side illumination type CMOS image sensor.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a national stage application under 35 U.S.C. 371 andclaims the benefit of PCT Application No. PCT/JP2017/000072 having aninternational filing date of 5 Jan. 2017, which designated the UnitedStates, which PCT application claimed the benefit of Japanese PatentApplication No. 2016-007023 filed 18 Jan. 2016, the entire disclosuresof each of which are incorporated herein by reference.

TECHNICAL FIELD

The present technique relates to a solid-state image pickup element andan electronic apparatus, and more particularly to a back sideillumination type solid-state image pickup element and an electronicapparatus using the back side illumination type solid-state image pickupelement.

BACKGROUND ART

In recent years, a laminated back side illumination type solid-stateimage pickup element has become popular in which a pixel substrate and acontrol substrate are laminated on each other. In this case, pixels areformed on the pixel substrate. A control circuit for carrying outcontrol for the pixels, processing for a pixel signal, and the like isformed on the control substrate.

For example, in the case where in the laminated back side illuminationtype solid-state image pickup element, a pad is formed in a wiring layerof the control substrate, a position of the pad becomes deep when viewedfrom the pixel substrate side (light receiving surface side). As aresult, in a wire bonding process, a process margin becomes narrow. Inaddition, it is feared that a tip of a ball for wire connection(hereinafter, referred to as a wire bond ball) which is formed on thepad is not sufficiently exposed from the surface of the pixel substrate,and thus tests for various kinds of assembly processes become difficultto carry out. For example, it is feared that a test for strength ofbonding between the wire bonding ball and the pad becomes difficult tocarry out.

On the other hand, heretofore, it has been proposed that in the backside illumination type solid-state image pickup element, a pad is formedon an upper surface of a wiring on an uppermost layer of a wiring layerof the pixel substrate (for example, refer to PTL 1). In addition,heretofore, it has also been proposed that in the back side illuminationtype solid-state image pickup element, a pad is formed within asemiconductor layer, in which a photoelectric conversion element and thelike are formed, of the pixel substrate (for example, refer to PTL 2).In any case, as compared with the case where the pad is formed in thewiring layer of the control substrate, the position of the pad can bemade shallow.

CITATION LIST Patent Literature

[PTL 1]

Japanese Patent Laid-Open No. 2012-235126

[PTL 2]

Japanese Patent Laid-Open No. 2005-191492

SUMMARY Technical Problems

However, in the case where the pad is formed on the upper surface of thewiring in the uppermost layer of the wiring layer of the pixelsubstrate, since a through hole for formation of the pad is formed inthe semiconductor layer, the undulation is generated on thesemiconductor layer. Owing to the undulation generated on thesemiconductor layer, a coating film becomes difficult to uniformly formin a light condensing process for forming a color filter, a microlens,and the like on the semiconductor layer. As a result, the surfaceirregularity is generated in a thickness of the coating film, and thusit is feared that the light condensing characteristics become worse.

In addition, in the case where the pad is generated in the semiconductorlayer of the pixel substrate, for example, a limitation of thetemperatures is caused in a high-temperature process for forming asemiconductor element in the semiconductor layer. For example, in thecase where the pad is made of Al (aluminum), the temperature of thehigh-temperature process needs to be suppressed to approximately 400° C.or less. As a result, it is feared that the characteristics of thesemiconductor element become worse.

On the other hand, for the purpose of avoiding a limitation of thetemperature in the high-temperature process, in the case where the padis formed after the semiconductor element is formed on the semiconductorlayer, for planarizing a trench in which the pad is filled, and a gateof the semiconductor element, an interlayer film of the wiring layerneeds to be thickened. As a result, it is feared that the circuitcharacteristics become worse due to an increase in a contact resistanceof the wiring layer, and the like.

In the light of the foregoing, the present technique enables a pad to beformed in a suitable position while reduction of a quality of a backside illumination type solid-state image pickup element is suppressed.

Solution to Problems

A solid-state image pickup element of a first aspect of the presenttechnique is provided with a pixel substrate in which a light condensinglayer, a semiconductor layer, and a wiring layer are laminated, and atleast a part of a first surface of a pad is exposed through a throughhole completely extending through the light condensing layer and thesemiconductor layer. In this case, the light condensing layer serves tocondense incident light on a photoelectric conversion element. Thephotoelectric conversion element is formed in the semiconductor layer. Awiring and the pad for outside connection are formed in the wiringlayer.

The wiring of the wiring layer can be connected to a second surface on aside opposite to the first surface of the pad through a via.

The wiring of the wiring layer can be connected to a side surface of thepad.

A control substrate provided with a control circuit and laminated on thewiring layer side of the pixel substrate can be further provided.

A support substrate laminated on the wiring layer side of the pixelsubstrate can be further provided.

A control substrate, a first via, and a second via can be furtherprovided. In this case, a control circuit is arranged on the controlsubstrate, and the control substrate is laminated on the wiring layerside of the pixel substrate. The first via completely extends throughthe semiconductor layer, and is connected to the first surface of thepad. The second via is connected to the first via in the lightcondensing layer, completely extends through the semiconductor layer andthe wiring layer, and is connected to a wiring of the control substrate.

A control substrate and a via can be further provided. In this case, acontrol circuit is arranged in the control substrate, and the controlsubstrate is laminated on the wiring layer side of the pixel substrate.The via completely extends through the semiconductor layer and thewiring layer, and a side surface of the pad and a wiring of the controlsubstrate are connected to each other through the via.

An electronic apparatus of a second aspect of the present technique isprovided with a solid-state image pickup element and a signal processingportion for processing a signal output from the solid-state image pickupelement. The solid-state image pickup element is provided with a pixelsubstrate in which a light condensing layer, a semiconductor layer, anda wiring layer are laminated. In this case, the light condensing layerserves to condense incident light on a photoelectric conversion element.The photoelectric conversion element is formed in the semiconductorlayer. A wiring and a pad for outside connection are formed in thewiring layer, and at least a part of the first surface of the pad isexposed through a through hole completely extending through the lightcondensing layer and the semiconductor layer.

In the first aspect or the second aspect of the present technique, thesolid-state image pickup element is connected to the outside through thepad.

Advantageous Effect of Invention

According to the first aspect or the second aspect of the presenttechnique, the pad can be formed in the suitable position while thereduction of the quality of the back side illumination type solid-stateimage pickup element is suppressed.

It should be noted that the effect described here is not necessarilylimited, and any of the effects described in the present disclosure maybe offered.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a system configuration diagram depicting an outline of aconfiguration of a CMOS image sensor to which the present technique isapplied.

FIG. 2 is a circuit diagram depicting an example of a configuration of apixel.

FIG. 3 is a cross-sectional view schematically depicting a firstembodiment of a CMOS image sensor.

FIG. 4 is a view explaining a method of manufacturing the CMOS imagesensor of FIG. 3.

FIG. 5 is a view explaining the method of manufacturing the CMOS imagesensor of FIG. 3.

FIG. 6 is a view explaining the method of manufacturing the CMOS imagesensor of FIG. 3.

FIG. 7 is a view explaining a first example of processes formanufacturing a pad.

FIG. 8 is a view explaining the first example of the processes formanufacturing a pad.

FIG. 9 is a view explaining a second example of processes formanufacturing a pad.

FIG. 10 is a view explaining a third example of processes formanufacturing a pad.

FIG. 11 is a view explaining a fourth example of processes formanufacturing a pad.

FIG. 12 is a view depicting an example of connection of the pad of theCMOS image sensor of FIG. 3.

FIG. 13 is a cross-sectional view schematically depicting a secondembodiment of a CMOS image sensor.

FIG. 14 is a view depicting an example of connection of a pad of theCMOS image sensor of FIG. 13.

FIG. 15 is a cross-sectional view schematically depicting a thirdembodiment of a CMOS image sensor.

FIG. 16 is a view depicting an example of connection of a pad of theCMOS image sensor of FIG. 15.

FIG. 17 is a cross-sectional view schematically depicting a fourthembodiment of a CMOS image sensor.

FIG. 18 is a view depicting an example of connection of a pad of theCMOS image sensor of FIG. 17.

FIG. 19 is a view depicting examples of use of a solid-state imagepickup element.

FIG. 20 is a block diagram depicting an example of a configuration of anelectronic apparatus.

DESCRIPTION OF EMBODIMENTS

Hereinafter, modes for carrying out the invention (hereinafter,described as “embodiments”) will be described in detail with referenceto the drawings. It should be noted that the description will be givenin accordance with the following order.

1. Solid-State Image Pickup Element to Which the Present Technique isApplied

2. First Embodiment (an example in which a wiring is directly connectedto a pad)

3. Second Embodiment (an example in which a pad is connected to a wiringthrough a via)

4. Third Embodiment (a first example in which a pad and a controlsubstrate are connected to each other through a via)

5. Fourth Embodiment (a second example in which the pad and the controlsubstrate are connected to each other through a via)

6. Modified Changes

7. Examples of Use of Solid-State Image Pickup Element

<1. Solid-State Image Pickup Element to which the Present Technique isApplied>

{Basic System Configuration}

FIG. 1 is a system configuration diagram depicting an outline of aconfiguration of a solid-state image pickup element to which the presenttechnique is applied, for example, a CMOS image sensor as a sort of X-Yaddress system solid-state image pickup element. Here, the CMOS imagesensor means an image sensor which is manufactured by applying a CMOSprocess, or by partially using the CMOS process.

A CMOS image sensor 10 according to the present application example isprovided with a pixel array portion 11 and a peripheral circuit portion.The peripheral circuit portion, for example, is provided with a verticaldrive portion 12, a column processing portion 13, a horizontal driveportion 14, and a system control portion 15.

The CMOS image sensor 10 is further provided with a signal processingportion 18 and a data storing portion 19. The signal processing portion18 and the data storing portion 19 may be both mounted on the samesubstrate as that of the CMOS image sensor 10, or may be both arrangedon a substrate different from that of the CMOS image sensor 10. Inaddition, pieces of processing executed by the signal processing portion18 and the data storing portion 19 may be pieces of processing executedby an external signal processing portion provided on a substratedifferent from that of the CMOS image sensor 10, for example, a DSP(Digital Signal Processor) circuit, or software.

The pixel array portion 11 is configured in such a way that a pluralityof unit pixels (hereinafter, simply referred to as “pixels” in somecases) is arranged in a row direction and in a column direction. Here,the row direction means an array direction (that is, a horizontaldirection) of the pixels in the pixel rows, and the column directionmeans an array direction (that is, the vertical direction) of the pixelsin the pixel columns.

The unit pixel has a photoelectric conversion portion (for example, aphotodiode) for producing and accumulating electric charges respondingto a light quantity of received light, and a plurality of pixeltransistors (so-called MOS transistors). It should be noted that anexample of a configuration of the unit pixel will be described laterwith reference to FIG. 2.

In addition, in the pixel array portion 11, a pixel drive line 16 as arow signal line is wired along the row direction every pixel row, and avertical signal line 17 as a column signal line is wired along thecolumn direction every pixel column. The pixel drive line 16 transmits adrive signal in accordance with which the drive is carried out when asignal is read out from the pixel. Although in FIG. 1, one wiring isillustrated as the pixel drive line 16, the number of pixel drive lines16 is by no means limited to one. One ends of the pixel drive lines 16are connected to output ends corresponding to the respective rows of thevertical drive portion 12.

The vertical drive portion 12 includes a shift register, an addressdecoder, and the like, and drives the pixels of the pixel array portion11 simultaneously in all the pixels, in units of rows, or the like. Thatis, the vertical drive portion 12 configures, together with the systemcontrol portion 15 for controlling the vertical drive portion 12concerned, a drive portion for controlling the operations of therespective pixels of the pixel array portion 11. Although a concreteconfiguration of the vertical drive portion 12 is omitted inillustration thereof, in general, the vertical drive portion 12 isconfigured to have two scanning systems: a read scanning system; and asweep scanning system.

The read scanning system, for reading out the signal from the unitpixel, selectively scans in order the unit pixels of the pixel arrayportions 11 in units of rows. The signal read out from the unit pixel isan analog signal. The sweep scanning system carries out the sweepscanning for the read row for which the read scanning is carried out bythe read scanning system prior to the read scanning by an exposure time.

The sweep scanning by the sweep scanning system results in that theunnecessary electric charges are swept out from the photoelectricconversion portion of the unit pixel of the read row, thereby resettingthe photoelectric conversion portion concerned. Then, the unnecessaryelectric charges are swept (reset) by the sweep scanning system, therebycarrying out a so-called electronic shutter operation. Here, theelectronic shutter operation means an operation for abandoning theelectric charges accumulated in the photoelectric conversion portion tonewly start the exposure (start the accumulation of the electriccharges).

The signal read out by the reading operation by the read scanning systemcorresponds to the light quantity of received light by the last readingoperation or in and after the electronic shutter operation. Then, aperiod of time ranging from either a reading timing by the last readingoperation or a sweep timing by the electronic shutter operation to areading timing by the current reading operation becomes a period of timefor exposure for the electric charges in the unit pixel.

The signals output from the respective unit pixels of the pixel rowwhich is selectively scanned by the vertical drive portion 12 are inputto the column processing portion 13 through the respective verticalsignal lines 17 every pixel column. The column processing portion 13executes predetermined signal processing for the signals output throughthe respective vertical signal lines 17 from the pixels of the selectedrow every pixel column of the pixel array portion 11, and temporarilyholds therein the pixel signals after the signal processing.

Specifically, the column processing portion 13 executes, as the signalprocessing, at least noise removal processing, for example, CDS(Correlated Double Sampling) processing or DDS (Double Data Sampling)processing. For example, by executing the CDS processing, reset noiseand a fixed pattern noise peculiar to the pixel such as threshold valuedispersion of an amplifying transistor within the pixel are removedaway. The column processing portion 13 can be given, for example, an AD(analog-digital) conversion function in addition to the noise removalprocessing, and can convert the analog pixel signal into a digitalsignal, thereby outputting the resulting digital signal.

The horizontal drive portion 14 includes a shift register, an addressdecoder, and the like, and selects the unit circuits, in order,corresponding to the pixel column of the column processing portion 13.The selective scanning by the horizontal drive portion 14 results inthat the pixel signals subjected to the signal processing every unitcircuit in the column processing portion 13 are output in order.

The system control portion 15 includes a timing generator for producingvarious kinds of timing signals, and the like. The system controlportion 15 carries out the drive control for the vertical drive portion12, the column processing portion 13, the horizontal drive portion 14,and the like on the basis of the various kinds of timings produced bythe timing generator concerned.

The signal processing portion 18 has at least an arithmetic operationprocessing function, and executes various pieces of signal processingsuch as arithmetic operation processing and the like for the pixelsignals output from the column processing portion 13. The data storingportion 19, in executing the signal processing in the signal processingportion 18, temporarily stores therein the data necessary for thatprocessing.

{Example of Configuration of Pixel}

Next, a description will be given with respect to a configuration ofeach of the pixels in the pixel array portion 11 described above. FIG. 2is a circuit diagram depicting an example of a configuration of onepixel provided in the pixel array portion 11.

In this example, the pixel of the pixel array portion 11 includes aphotoelectric conversion element 51, a transfer gate portion 52, acharge-to-voltage converting portion 53, a reset gate portion 54, anamplifying transistor 55, and a selection transistor 56.

The photoelectric conversion element 51, for example, is composed of aPN junction photodiode, and receives light from a subject and producesthe electric charges responding to the light quantity of received lightthrough the photoelectric conversion to accumulate therein the resultingelectric charges.

The transfer gate portion 52 is provided between the photoelectricconversion element 51 and the charge-to-voltage converting portion 53.The transfer gate portion 52 transfers the electric charges accumulatedin the photoelectric conversion element 51 to the charge-to-voltageconverting portion 53 in accordance with a drive signal TRG supplied toa gate electrode of the transfer gate portion 52.

For example, the transfer gate portion 52, the reset gate portion 54,and the selection transistor 56 are composed of an N-channel MOStransistor. Then, the drive signals TRG, RST, and SEL are supplied tothe gate electrodes of the transfer gate portion 52 to the selectiontransistor 56. Each of these drive signals is a pulse signal a low levelstate of which becomes an active state (ON state), and a low level stateof which becomes a non-active state (OFF state).

Therefore, for example, when in the transfer gate portion 52, the drivesignal TRG supplied to the gate electrode of the transfer gate portion52 becomes the active state to turn ON the transfer gate portion 52, theelectric charges accumulated in the photoelectric conversion element 51are transferred to the charge-to-voltage converting portion 53.

The charge-to-voltage converting portion 53 is a floating diffusion area(FD) in which the electric charges transferred thereto from thephotoelectric conversion element 51 through the transfer gate portion 52is converted into an electric signal, for example, a voltage signal andthe resulting signal is output.

The reset gate portion 54 is connected to the charge-to-voltageconverting portion 53, and the charge-to-voltage converting portion 53is connected to the vertical signal line 17 through the amplifyingtransistor 55 and the selection transistor 56.

The reset gate portion 54 is an element for suitably initializing(resetting) the charge-to-voltage converting portion 53 and the like. Adrain of the reset gate portion 54 is connected to a power source havinga power source voltage VDD, and a source thereof is connected to thecharge-to-voltage converting portion 53. The drive signal RST is appliedas a reset signal to the gate electrode of the reset gate portion 54.

In addition, when the drive signal RST is set to the active state, thereset gate portion 54 becomes a conduction state, so that an electricpotential at each of the charge-to-voltage converting portion 53 and thelike is reset to a level of the power source voltage VDD. That is, thecharge-to-voltage converting portion 53 and the like are initialized.

The gate electrode of the amplifying transistor 55 is connected to thecharge-to-voltage converting portion 53, and a drain thereof isconnected to a power source having the power source voltage VDD. Then,the amplifying transistor 55 becomes an input portion of a sourcefollower circuit for reading out the electric charges obtained throughthe photoelectric conversion in the photoelectric conversion element 51.That is, the amplifying transistor 55 is connected in source thereof tothe vertical signal line 17 through the selection transistor 56, therebyconfiguring, together with a constant current source connected to oneend of the vertical signal line 17 and the source follower circuit.

The selection transistor 56 is connected between the source of theamplifying transistor 55 and the vertical signal line 17. The drivesignal SEL is supplied as the selection signal to the gate electrode ofthe selection transistor 56. When the drive signal SEL is set to theactive state, the selection transistor 56 becomes the conduction state,so that the pixel having the selection transistor 56 provided therein isset to the selection state. When the pixel is set to the selectionstate, the signal output from the amplifying transistor 55 is read outto the column processing portion 13 through the vertical signal line 17.

In addition, in the respective pixels, a plurality of drive lines iswired as the pixel drive lines 16 of FIG. 1, for example, every pixelrow. Then, the drive signals TRG, RST, and SEL are supplied from thevertical drive portion 12 to the inside of the pixel through a pluralityof drive lines as the pixel drive lines 16.

It should be noted that the pixel circuit of FIG. 2 is an example of thepixel circuit which can be used in the pixel array portion 11, and thepixel circuits having other configurations can also be used.

In addition, the respective pixels can also adopt a shared pixelstructure. The shared pixel structure, for example, includes a pluralityof photoelectric conversion elements, a plurality of transfertransistors, shared one charge-to-voltage converting portion, and otherpixel transistors shared on one-by-one basis.

2. First Embodiment

Next, a description will be given with respect to a CMOS image sensor 10a as a first embodiment of the CMOS image sensor 10 of FIG. 1 withreference to FIG. 3 to FIG. 12.

{Example of Structure of CMOS Image Sensor 10 a}

FIG. 3 is a cross-sectional view schematically depicting a part of anexample of a structure of the CMOS image sensor 10 a.

It should be noted that hereinafter, an incidence side of light (upperside of FIG. 3) is set as an upper side of the CMOS image sensor 10 a,and a side (lower side of FIG. 3) opposite to the incidence side oflight is set as a lower side of the CMOS image sensor 10 a.

The CMOS image sensor 10 a has a so-called back side illumination typestructure in which the light is made incident to the CMOS image sensor10 a from a back surface side opposite to a front surface on a wiringlayer 101C side of a pixel substrate 101. It should be noted that a backsurface of the pixel substrate 101 is referred to as an incidencesurface or a light receiving surface.

The CMOS image sensor 10 a has a laminated back side illumination typestructure in which a pixel substrate 101 and a control substrate 102 arelaminated on each other. The pixel array portion 11 of FIG. 1, forexample, is arranged in the pixel substrate 101. On the other hand, thevertical drive portion 12, the column processing portion 13, thehorizontal drive portion 14, the system control portion 15, the signalprocessing portion 18, and the data storing portion 19, for example, arearranged in the control substrate 102.

It should be noted that a part of the vertical drive portion 12, thecolumn processing portion 13, the horizontal drive portion 14, thesystem control portion 15, the signal processing portion 18, and thedata storing portion 19 may be arranged in the pixel substrate 101. Inaddition, for example, the signal processing portion 18 and the datastoring portion 19 may be arranged in a substrate different from thepixel substrate 101 and the control substrate 102.

In the pixel substrate 101, a light condensing layer 101A, asemiconductor layer 101B, and a wiring layer 101C are laminated in orderfrom the upper side. Therefore, the light condensing layer 101A and thewiring layer 101C are arranged across the semiconductor layer 101B (withthe semiconductor layer 101B as a reference) on sides opposite to eachother.

An on-chip microlens 121, a color filter 122, and the like are formed inthe light condensing layer 101A. Light made incident from an object toan upper surface (incidence surface) of the light condensing layer 101Ais condensed on a photoelectric conversion element 51 (not depicted)formed in the semiconductor layer 101B by the on-chip microlens 121.

Although illustration is omitted, the semiconductor elements such as thephotoelectric conversion element 51, the transfer gate portion 52, thecharge-to-voltage converting portion 53, the reset gate portion 54, theamplifying transistor 55, and the selection transistor 56 are formed inthe semiconductor layer 101B.

The wirings 123 are formed over four layers in the vertical direction inthe wiring layer 101C. The wirings 123 of the layers are connected toone another through the via 124. The wirings 123 and the via 124, forexample, are made of Cu.

In addition, a pad 125 for outside connection is formed in the wiringlayer 101C. In this example, the pad 125 is arranged to have a heightapproximately equal to that of the wirings 123 from a second level to afourth level of the wiring layer 101C, and a third level wiring 123 isconnected to a side surface of the pad 125. A through hole 101D whichcompletely extends through the light condensing layer 101A and thesemiconductor layer 101B is formed above the pad 125. The formation ofthe through hole 101D results in that a part of a surface (hereinafter,referred to as a connection surface) on which a wire-bond ball of thepad 125 is formed is exposed.

Moreover, a pad 126 for joining to the control substrate 102 is formedon a lower end of the wiring layer 101C. The pad 126 is connected to thefourth level wiring 123 through the via 124. The pad 126, for example,is made of Cu.

A wiring layer 102A and a semiconductor layer 102B are laminated inorder from the upper side in the control substrate 102. The controlsubstrate 102 is laminated on the wiring layer 101C side of the pixelsubstrate 101, and the wiring layer 101C of the pixel substrate 101 andthe wiring layer 102A of the control substrate 102 contact each other.

A pad 141 for joining to the pixel substrate 101 is formed in an upperend of the wiring layer 102A. The pad 141, for example, is made of Cu.Although in FIG. 3, for the sake of clarification of the figure, a gapis formed, the lower surface of the pad 126 of the pixel substrate 101,and the upper surface of the pad 141 of the control substrate 102 areCu—Cu joined to each other. Therefore, in the CMOS image sensor 10 a,the pad 126 and the pad 141 are not used for the outside connection, butfunction as the internal wirings.

In addition, an Al wiring 143 is formed in the wiring layer 102A. The Alwiring 143 is arranged between the pad 141 of the wiring layer 102A, andthe first level wiring 144, and is connected to the pad 141 and thefirst level wiring 144 through the via 142. The via 142, for example, ismade of Cu.

Moreover, the wirings 144 are formed over the three layers in thevertical direction in the wiring layer 102A. The wirings 144 of thelayers are connected to one another through the via 142.

Although illustration is omitted, the control circuit configuring thevertical drive portion 12, the column processing portion 13, thehorizontal drive portion 14, the system control portion 15, the signalprocessing portion 18, and the data storing portion 19 of FIG. 1, andthe like are formed in the semiconductor layer 102B.

Then, the pad 125 of the pixel substrate 101 is connected to the controlcircuit of the semiconductor layer 102B of the control substrate 102through the wiring 123, the via 124, and the pad 126 of the wiring layer101C of the pixel substrate 101, and the pad 141, the via 142, the Alwiring 143, and the wiring 144 of the wiring layer 102A of the controlsubstrate 102.

{Method of Manufacturing CMOS Image Sensor 10 a}

Next, a description will be given with respect to a method ofmanufacturing the CMOS image sensor 10 a with reference to FIG. 4 toFIG. 6.

It should be noted that in a process 1 and a process 2 of FIG. 4, thevertical direction of the pixel substrate 101 is reversed to that ofFIG. 3.

In the process 1, the semiconductor elements (not depicted) such as thephotoelectric conversion element 51, the transfer gate portion 52, thecharge-to-voltage converting portion 53, the reset gate portion 54, theamplifying transistor 55, and the selection transistor 56 are formed inthe semiconductor layer 101B of the pixel substrate 101. In addition,the wiring 123 and the via 124 are formed in the wiring layer 101C ofthe pixel substrate 101.

It should be noted that since at this time point, the pad 125 is not yetformed, the limitation of the temperature is not caused in ahigh-temperature process for forming the semiconductor elements in thesemiconductor layer 101B.

In addition, for example, a distance from the lower surface of thesemiconductor layer 101B (the connection surface to the wiring layer101C) to the wiring 123 of the uppermost layer of the wiring layer 101Cis adjusted, thereby enabling a depth to which the pad 125 is to befilled to be freely adjusted. The depth to which the pad 125 is to befilled, for example, is determined from a viewpoint of a withstandingvoltage and a capacity between the pad 125 and the semiconductor layer101B, a damage applied to the wiring and an interlayer film under thepad 125 in a wire bonding process, and the like.

In the process 2, the pad 125 is filled in the wiring layer 101C of thepixel substrate 101. It should be noted that the details of a processfor manufacturing the pad 125 will be described later.

It should be noted that a relative depth of the pad 125 with respect tothe wiring 123 can be arbitrarily set. For example, although in thisexample, the connection surface (the lower surface in FIG. 4) of the pad125 is arranged in a deeper position (a position located far from thesemiconductor layer 101B) than the first level wiring 123, theconnection surface of the pad 125 can also be arranged in a shallowerposition (a position close to the semiconductor layer 101B) than thefirst level wiring 123.

In addition, although the illustration is omitted, after the pad 125 isfilled in the wiring layer 101C, the pad 126 and the via 124 throughwhich the pad 126 is to be connected to the wiring 123 are formed in theupper end in the figure of the wiring layer 101C.

In a process 3, the pixel substrate 101 and the control substrate 102are joined to each other. Specifically, a wafer (not depicted) in whichthe pixel substrate 101 is formed is reversed to be joined to a wafer(not depicted) in which the control substrate 102 is formed. As aresult, the lower surface of the wiring layer 101C of the pixelsubstrate 101, and the control substrate 102 are joined to each other.

In a process 4, the semiconductor layer 101B of the pixel substrate 101is thinned.

In a process 5, the light condensing layer 101A is formed on thesemiconductor layer 101B of the pixel substrate 101. The on-chipmicrolens 121, the color filter 122, and the like are formed in thelight condensing layer 101A.

It should be noted that since at this time point, the through hole 101Dis not yet formed, the undulation is hardly present on the upper surfaceof the semiconductor layer 101B. Therefore, in the process 5, thecoating film composing the light condensing layer 101A can be readilyuniformly applied, so that the surface irregularity of the thickness ofthe coating film can be suppressed. As a result, it is possible tosuppress that the light condensing characteristics become worse.

In addition, although in the process 5, the low-temperature process isrequired because an organic material system is used, since the pad 125is previously formed, and thus the formation of the pad 125 is notcarried out, the lamination of the temperature is not caused in thelow-temperature process.

In a process 6, the though hole 101D is formed in the pixel substrate101. The though hole 101D completely extends through the lightcondensing layer 101A and the semiconductor layer 101B of the pixelsubstrate 101 to reach the connection surface of the pad 125. As aresult, a part of the connection surface of the pad 125 is exposed.

After that, for example, a wire bond ball (not depicted) is formed onthe connection surface of the pad 125. In addition, the wafer in whichthe pixel substrate 101 is formed, and the wafer in which the controlsubstrate 102 is formed are laminated on each other is separated,thereby forming the CMOS image sensor 10 a.

{Details of Process for Manufacturing Pad 125}

Next, a description will be given with respect to a detailed example ofthe process for manufacturing the pad 125 in the process 2 of FIG. 5with reference to FIG. 7 to FIG. 11.

It should be noted that in FIG. 7 to FIG. 11, the vertical direction ofthe pixel substrate 101 is reversed to that of FIG. 3. In addition, inFIG. 7 to FIG. 11, for the sake of clarification of the figures, aportion in the vicinity of the pad 125 is enlarged to be depicted, and adescription of a part of reference symbols of the portions is omitted.

{First Example of Process for Manufacturing Pad 125}

Firstly, a description will be given with respect to a first example ofa process for manufacturing the pad 125 with reference to FIG. 7 andFIG. 8.

In a process 2-1, a trench 201 is formed in the wiring layer 101C of thepixel substrate 101. The trench 201 is formed to a depth to which theconnection surface of the pad 125 is to be formed.

In a process 2-2, an Al film 202 for formation of the pad 125 isdeposited on the lower surface (a surface opposite to the semiconductorlayer 101B) of the wiring layer 101C of the pixel substrate 101. The Alfilm 202 covers the entire lower surface of the wiring layer 101C, andis filled in the trench 201. In addition, a barrier metal 203 isdeposited on the surface of the Al film 202.

In a process 2-3 a, a resist agent is applied to the surface of thebarrier metal 203 and a resist film 204 is deposited.

In a process 2-4 a, etching is carried out. Specifically, firstly, theresist film 204 is etched until the surface of the Al film 202 isexposed. A portion in which the trench 201 is not formed of the resistfilm 204 is thinner than a portion thereof in which the trench 201 isformed. Therefore, the surface of the Al film 202 of the portion inwhich the trench 201 is not formed is exposed.

Next, at a time point when the surface of the Al film 202 is exposed,the etching for the resist film 204 is stopped, and the Al film 202 isetched. Then, at a time point when a surface of an oxide film (the lowersurface of the wiring layer 101C) of a portion other than the trench 201of the wiring layer 101C is exposed, the etching for the Al film 202 isstopped, and the resist film 204 is etched. As a result, as depicted inthe figure of the process 2-4 a, only the Al film 202 within the trench201 is left, thereby forming the pad 125.

In a process 2-5 a, an oxide film 205 is deposited on the lower surfaceof the wiring layer 101C as the preparation for the joining to thecontrol substrate 102. As a result, the pad 125 is filled in the wiringlayer 101C.

{Second Example of Process for Manufacturing Pad 125}

Next, a description will be given with respect to a second example ofthe process for manufacturing the pad 125 with reference to FIG. 9.

Firstly, the process 2-1 and process 2-2 described above with referenceto FIG. 7 are carried out.

Next, in a process 2-3 b, the Al film 202 is polished by using a CMP(Chemical Mechanical Polishing) process. As a result, the portion of theAl film 202 other than the portion of the Al film 202 within the trench201 is removed away, thereby forming the pad 125.

In a process 2-4 b, similarly to the case of the process 2-5 a of FIG.8, the oxide film 205 is deposited on the lower surface of the wiringlayer 101C as the preparation for the joining to the control substrate102.

{Third Example of Process for Manufacturing Pad 125}

Next, a description will be given with respect to a third example of theprocess for manufacturing the pad 125 with reference to FIG. 10.

Firstly, the process 2-1 and process 2-2 described above with referenceto FIG. 7 are carried out.

Next, in a process 2-3 c, a resist film 241 is deposited. At this time,the resist film 241 is formed only in an area in which the pad 125 is tobe formed.

In a process 2-4 c, the Al film 202 is etched. As a result, the portionof the Al film 202 other than the portion of the Al film 202 in whichthe resist film 241 is to be formed is removed away. Next, the resistfilm 241 is etched, so that the resist film 241 is removed away. As aresult, as depicted in a figure of a process 2-4 c, the pad 125 isformed within the trench 201. At this time, the pad 125 is not filled inthe entire trench 201, but has a shape responding to a shape of theresist film 241.

In a process 2-5 c, the oxide film 242 is deposited on the lower surfaceof the wiring layer 101C as the preparation for the joining to thecontrol substrate 102. As a result, the pad 125 is filled in the wiringlayer 101C. In addition, a gap of the trench 201 is filled with theoxide film 242. Then, the surface of the oxide film 242 is planarized byusing the CMP process.

{Fourth example of process for manufacturing pad 125}

Next, a description will be given with respect to a fourth example ofthe process for manufacturing the pad 125 with reference to FIG. 11.This fourth example is such that as compared with the case of the thirdexample, a pad 125 is formed in the outside as well of the trench 201.

Firstly, the process 2-1 and process 2-2 described above with referenceto FIG. 7 are carried out.

Next, in a process 2-3 d, a resist film 261 is deposited. At this time,the resist film 261 is formed only in an area in which the pad 125 is tobe formed.

In a process 2-4 d, the Al film 202 is etched. As a result, a portion ofthe Al film 202 other than a portion of the Al film 202 in which theresist film 241 is formed is removed away. Next, the resist film 241 isetched, so that the resist film 241 is removed away. As a result, asdepicted in a figure of the process 2-4 d, the pad 125 is formed in thetrench 201 and the periphery of the trench 201.

In a process 2-5 d, an oxide film 262 is deposited on the lower surfaceof the wiring layer 101C as the preparation for the joining to thecontrol substrate 102. As a result, the pad 125 is filled in the wiringlayer 101C. Then, the surface of the oxide film 262 is planarized byusing the CMP process.

{Example of Connection of Pad 125}

Next, a description will be given with respect to an example ofconnection of the pad 125 with reference to FIG. 12. A of FIGS. 12 and Bof FIG. 12 are views when the neighborhood of the pad 125 of the pixelsubstrate 101 is viewed from the upper side.

For example, as depicted in A of FIG. 12, at an arbitrary height of theside surface of the pad 125, the wiring 123 may be made to contact thepad 125 so as to surround the side surface of the pad 125.

In addition, for example, as depicted in B of FIG. 12, at an arbitraryheight of the side surface of the pad 125, the wiring 123 may surroundthe side surface of the pad 125, and the wiring 123 may also be made tocontact only a part of the side surface of the pad 125.

It should be noted that a position where the wiring 123 contacts the pad125 is not necessarily one position, and thus may be two or moreportions. In addition, the position or number by which the wiring 123contacts the pad 125, the wiring 123 of which of the layers is made tocontact the pad 125, and so forth, for example, are determined from aviewpoint of a resistance value, a capacity, the reliability, and thelike.

In the manner as described above, the pad 125 can be formed in thesuitable position while the reduction of the quality of the back sideillumination type CMOS image sensor 10 a is suppressed.

For example, the pad 125 can be formed in a position at the depth ofapproximately 10 μm or less from the light receiving surface of thepixel substrate 101 of the CMOS image sensor 10 a. As a result, the tipof the wire bond ball formed on the pad 125 is sufficiently exposed fromthe light receiving surface of the pixel substrate 101, so that thetests for the various kinds of assembly processes become easy to carryout.

In addition, as depicted above, in the process 5 of FIG. 6, the surfaceirregularity of the thickness of the coating film can be suppressed, andthus it is possible to suppress that the light condensingcharacteristics become worse.

Moreover, as described above, the limitation of the temperature is notcaused in the high-temperature process at the time of formation of thesemiconductor elements of the process 1 of FIG. 4, and in thelow-temperature process at the time of formation of the light condensinglayer 101A of the process 5 of FIG. 6. Therefore, the reduction of thecharacteristics of the CMOS image sensor 10 a can be suppressed.

3. Second Embodiment

Next, a description will be given with respect to a CMOS image sensor 10b as a second embodiment of the CMOS image sensor 10 of FIG. 1 withreference to FIG. 13 and FIG. 14.

{Example of Structure of CMOS Image Sensor 10 b}

FIG. 13 is a cross-sectional view schematically depicting a part of anexample of a structure of the CMOS image sensor 10 b. It should be notedthat portions corresponding to those of FIG. 3 are assigned the samereference symbols in the figure.

The CMOS image sensor 10 b is different from the CMOS image sensor 10 aof FIG. 3 in the method of connection of the pad 125. Specifically, inthe CMOS image sensor 10 b, the lower surface on a side opposite to theconnection surface of the pad 125, and the upper surface of the pad 126are connected to each other through the via 124.

{Example of Connection of Pad 125}

Next, a description will be given with respect to an example ofconnection of the pad 125 in the CMOS image sensor 10 b with referenceto FIG. 14. A of FIG. 14 and B of FIG. 14 are views when theneighborhood of the pad 125 of the pixel substrate 101 is viewed fromthe upper side.

For example, as depicted in A of FIG. 14, the vias 124 may be arrangedon the entire lower surface of the pad 125, and thus the pad 125 may beconnected to the pad 126.

In addition, for example, as depicted in B of FIG. 14, the vias 124 maybe arranged only in the outer peripheral portion of the lower surface ofthe pad 125, and thus the pad 125 may be connected to the pad 126. Inthis case, reduction in the number of vias 124 results in that thedamage applied to the pad 125 in forming the via 124 can be alleviated.

It should be noted that the number or positions of the vias 124 whichare to be connected to the pads 125, for example, is determined from aviewpoint of the resistance value, the capacity, the reliability, andthe like.

4. Third Embodiment

Next, a description will be given with respect to a CMOS image sensor 10c as a third embodiment of the CMOS image sensor 10 of FIG. 1 withreference to FIG. 15 and FIG. 16.

{Example of Structure of CMOS Image Sensor 10 c}

FIG. 15 is a cross-sectional view schematically depicting a part of anexample of a structure of the CMOS image sensor 10 c. It should be notedthat portions corresponding to those of FIG. 3 are assigned the samereference symbols in the figure.

The CMOS image sensor 10 c is different from the CMOS image sensor 10 aof FIG. 3 in the method of connection of the pad 125.

Specifically, in the CMOS image sensor 10 c, the via 301 completelyextends through the semiconductor layer 101B of the pixel substrate 101to be connected to the connection surface of the pad 125. In addition,the via 303 completely extends through the semiconductor layer 101B andthe wiring layer 101C of the pixel substrate 101 to be connected to theupper surface of the Al wiring 321 formed in the wiring layer 102A ofthe control substrate 102. For example, in the case where thesemiconductor layer 101B is made of silicon, the via 301 and the via 303are called a name of a silicon through electrode, a TSV (Through SiliconVia) or the like.

The via 301 and the via 303 are connected to each other through thewiring 302 in the light condensing layer 101A of the pixel substrate101. Therefore, the connection surface of the pad 125, and the uppersurface of the Al wiring 321 are connected to each other through the via301, the wiring 302, and the via 303.

In addition, the oxide film of the wiring layer 101C of the pixelsubstrate 101, and the oxide film of the wiring layer 102A of thecontrol substrate 102 are joined to each other, thereby joining thepixel substrate 101 and the control substrate 102 to each other.

{Example of Connection of Pad 125}

Next, referring to FIG. 16, a description will be given with respect toan example of connection of the pad 125 in the CMOS image sensor 10 c. Aof FIG. 16 and B of FIG. 16 are views when the neighborhood of the pad125 of the pixel substrate 101 is viewed from the upper side.

For example, as depicted in A of FIG. 16, the via 301 may be connectedto the upper surface of the pad 125 so as to surround the periphery ofthe portion exposed through the through hole 101D of the connectionsurface of the pad 125.

In addition, for example, as depicted in B of FIG. 16, the via 301 maybe connected to a part of the periphery of the portion exposed throughthe through hole 101D of the connection surface of the pad 125.

It should be noted that the position where the via 301 is connected tothe connection surface of the pad 125 can also be provided in two ormore portions. In addition, the position or number by which the via 301is connected to the connection surface of the pad 125, for example, isdetermined from a viewpoint of the resistance value, the capacity, thereliability, and the like.

In addition, for example, the via 303 can also be connected to thewiring 144 underlying the Al wiring 321 of the wiring layer 102A of thecontrol substrate 102. In addition, the via 303 can also be connected tothe wiring 144 of the wiring layer 102A of the control substrate 102without providing the Al wiring 321.

5. Fourth Embodiment

Next, a description will be given with respect to a CMOS image sensor 10d as a fourth embodiment of the CMOS image sensor 10 of FIG. 1 withreference to FIG. 17 and FIG. 18.

{Example of Structure of CMOS Image Sensor 10 d}

FIG. 17 is a cross-sectional view schematically depicting a part of anexample of a structure of the CMOS image sensor 10 d. It should be notedthat portions corresponding to those of FIG. 15 are assigned the samereference symbols in the figure.

The CMOS image sensor 10 d is different from the CMOS image sensor 10 cof FIG. 15 in the method of connection of the pad 125.

Specifically, in the CMOS image sensor 10 d, the via 341 completelyextends through the semiconductor layer 101B and the wiring layer 101Cof the pixel substrate 101 to be connected to the side surface of thepad 125 and the upper surface of the Al wiring 321. For example, in thecase where the semiconductor layer 101B is made of silicon, the via 341is called a name of a silicon through electrode, a TSV (Through SiliconVia) or the like. Then, the side surface of the pad 125 and the uppersurface of the Al wiring 321 are connected to each other through the via341, and this connection method is called a side contact, for example.

{Example of Connection of Pad 125}

Next, referring to FIG. 18, a description will be given with respect toan example of connection of the pad 125 in the CMOS image sensor 10 d. Aof FIG. 18 and B of FIG. 18 are views when the neighborhood of the pad125 of the pixel substrate 101 is viewed from the upper side.

For example, as depicted in A of FIG. 18, the via 341 may be made tocontact the side surface of the pad 125 so as to surround the sidesurface of the pad 125.

In addition, for example, as depicted in B of FIG. 18, the via 341 maybe made to contact a part of the side surface of the pad 125.

It should be noted that a position where the via 341 is made to contactthe side surface of the pad 125 is not necessarily one position, andthus may be two or more positions. In addition, the position and numberby which the via 341 is made to contact the side surface of the pad 125,for example, are determined from a viewpoint of the resistance value,the capacity, the reliability, and the like.

In addition, for example, the via 341 can also be connected to thewiring 144 underlying the Al wiring 321 of the wiring layer 102A of thecontrol substrate 102. In addition, the via 341 can also be connected tothe wiring 144 of the wiring layer 102A of the control substrate 102without providing the Al wiring 321.

6. Modified Changes

Hereinafter, a description will be given with respect to modifiedchanges of the embodiments of the present technique described above.

Although in the foregoing, the description has been given with respectto the example in which the present technique is applied to the backside illumination type CMOS image sensor having the laminated structureof the two layers: the pixel substrate; and the control substrate, thepresent technique can also be applied to the back side illumination typeCMOS image sensor having the laminated structure of three or morelayers. In addition, the present technique, for example, can also beapplied to a laminated back side illumination type CMOS image sensor inwhich a control circuit is arranged on a pixel substrate, and a supportsubstrate is laminated instead of the control substrate. Moreover, thepresent technique can also be applied to a back side illumination typeCMOS image sensor in which a control circuit is arranged on the pixelsubstrate to obtain a single layer structure having only the pixelsubstrate as the substrate.

In addition, the number of layers or the structure of the wirings of thepixel substrate and the control substrate are by no means limited to theexample described above, and can be arbitrarily changed.

In addition, the present technique is not limited to the application tothe CMOS image sensor, but also is applied to a back side illuminationtype solid-state image pickup element other than the CMOS image sensor.

7. Examples of Use of Solid-State Image Pickup Element

FIG. 19 is a view depicting examples of use of the solid-state imagepickup element described above.

The solid-state image pickup element described above, for example, aswill be described below, can be used in such various cases as to sensethe light such as visible light, infrared radiation, ultraviolet rays,and X-rays.

-   -   An apparatus, for photographing an image for use in        appreciation, such as a digital camera or a portable apparatus        with a camera function    -   An apparatus, for use in traffic, such as an on-board sensor for        photographing, a front side, a rear side, a periphery, a car        interior for safe driving such as automatic stop, recognition of        a state of a driver, or the like, a monitoring camera for        monitoring a road for a travelling vehicle, or a distance        measuring sensor for measuring a distance between vehicles    -   An apparatus, for use in a consumer electronics, such as a TV, a        refrigerator, or an air conditioner, for imaging a gesture of a        user to carry out an apparatus operation responding to the        gesture    -   An apparatus, for use in medical care or health care, such as an        endoscope, or an apparatus for photographing a blood vessel by        receiving infrared rays    -   An apparatus, for use in security, such as a monitoring camera        for security applications, or a camera for person authentication        applications    -   An apparatus, for use in beauty, such as a skin measuring        instrument for photographing a skin, or a microscope for        photographing a scalp    -   An apparatus, for sport, such as an action camera or a wearable        camera for sport applications    -   An apparatus, for use in agriculture, such as a camera for        monitoring a state of a field or crops        {Image Pickup Apparatus}

FIG. 20 is a block diagram depicting an example of a configuration of anelectronic apparatus 500 having a semiconductor device to which thepresent technique is applied.

The electronic apparatus 500, for example, is an electronic apparatussuch as an image pickup apparatus such as a digital still camera or avideo camera, or a mobile terminal apparatus such as a smartphone or atablet type terminal.

In FIG. 20, the electronic apparatus 500 includes a lens 501, an imagepickup element 502, a DSP circuit 503, a frame memory 504, a displayportion 505, a recording portion 506, a manipulation portion 507, and apower source portion 508. In addition, in the electronic apparatus 500,the DSP circuit 503, the frame memory 504, the display portion 505, therecording portion 506, the manipulation portion 507, and the powersource portion 508 are connected to one another through a bus line 509.

The image pickup element 502, for example, corresponds to each of theCMOS image sensors 10 a to 10 d described above.

The DSP circuit 503 is a camera signal processing circuit for processinga signal supplied thereto from the image pickup element 502. The DSPcircuit 503 outputs image data which is obtained by processing thesignal from the image pickup element 502. The frame memory 504temporarily holds therein the image data obtained by executing theprocessing in the DSP circuit 503 in units of a frame.

The display portion 505, for example, is composed of a panel typedisplay device such as a liquid crystal panel or an organic EL (ElectroLuminescence) panel, and displays thereon a moving image or a stillimage captured by the image pickup element 502. The recording portion506 records the image data associated with the moving image or the stillimage captured by the image pickup element 502 in a recording mediumsuch as a semiconductor memory or a hard disc.

The manipulation portion 507 outputs a manipulation instruction aboutvarious kinds of functions which the electronic apparatus 500 has inaccordance with a manipulation made by a user. The power source portion508 suitably supplies various kinds of power sources becoming operationpower sources of the DSP circuit 503, the frame memory 504, the displayportion 505, the recording portion 506, and the manipulation portion 507to these supply objects.

It should be noted that the embodiments of the present technique are byno means limited to these embodiments described above, and variouschanges can be made without departing from the subject matter of thepresent technique.

In addition, for example, the present technique can also adopt thefollowing constitutions.

(1)

A solid-state image pickup element including:

a pixel substrate in which

-   -   a light condensing layer for condensing incident light on a        photoelectric conversion element,    -   a semiconductor layer in which the photoelectric conversion        element is formed, and    -   a wiring layer in which a wiring and a pad for outside        connection are formed

are laminated on one another, and at least a part of a first surface ofthe pad is exposed through a through hole completely extending throughthe light condensing layer and the semiconductor layer.

(2)

The solid-state image pickup element according to (1) described above,in which the wiring of the wiring layer is connected to a second surfaceon a side opposite to the first surface of the pad through a via.

(3)

The solid-state image pickup element according to (1) described above,in which the wiring of the wiring layer is connected to a side surfaceof the pad.

(4)

The solid-state image pickup element according to any one of (1) to (3)described above, further including:

a control substrate provided with a control circuit, and laminated onthe wiring layer side of the pixel substrate.

(5)

The solid-state image pickup element according to any one of (1) to (3)described above, further including:

a support substrate laminated on the wiring layer side of the pixelsubstrate.

(6)

The solid-state image pickup element according to (1) described above,further including:

a control substrate in which a control circuit is arranged and which islaminated on the wiring layer side of the pixel substrate;

a first via completely extending through the semiconductor layer to beconnected to the first surface of the pad; and

a second via connected to the first via in the light condensing layer,and completely extending through the semiconductor layer and the wiringlayer to be connected to a wiring of the control substrate.

(7)

The solid-state image pickup element according to (1) described above,further including:

a control substrate in which a control circuit is arranged and which islaminated on the wiring layer side of the pixel substrate; and

a via which completely extends through the semiconductor layer and thewiring layer, and through which a side surface of the pad and a wiringof the control substrate are connected to each other.

(8)

An electronic apparatus including:

a solid-state image pickup element; and

a signal processing portion for processing a signal output from thesolid-state image pickup element,

the solid-state image pickup element including a pixel substrate inwhich

-   -   a light condensing layer for condensing incident light on a        photoelectric conversion element,    -   a semiconductor layer in which the photoelectric conversion        element is formed, and    -   a wiring layer in which a wiring and a pad for outside        connection are formed

are laminated on one another, and at least a part of a first surface ofthe pad is exposed through a through hole completely extending throughthe light condensing layer and the semiconductor layer.

REFERENCE SIGNS LIST

10, 10 a to 10 d CMOS image sensor, 11 Pixel array portion, 12 Verticaldrive portion, 13 Column processing portion, 14 Horizontal driveportion, 15 System control portion, 16 Pixel drive line, 17 Verticalsignal line, 18 Signal processing portion, 19 Data storing portion, 51Photoelectric conversion element, 52 Transfer gate portion, 53Charge-to-voltage converting portion, 54 Reset gate portion, 55Amplifying transistor, 56 Selection transistor, 101 Pixel substrate,101A Light condensing layer, 101B Semiconductor layer, 101C Wiringlayer, 102 Control substrate, 102A Wiring layer, 102B Semiconductorlayer, 121 On-chip microlens, 123 Wiring, 124 Via, 125, 126 Pad, 141Pad, 142 Via, 143 Al wiring, 144 Wiring, 301 Via, 302 Wiring, 303 Via,321 Al wiring, 341 Via, 500 Electronic apparatus, 502 Image pickupelement, 503 DSP circuit

What is claimed is:
 1. A solid-state image pickup element comprising: apixel substrate including a light condensing layer for condensingincident light on a photoelectric conversion element, a semiconductorlayer in which the photoelectric conversion element is formed, and awiring layer in which a wiring and a pad for outside connection arelaminated on one another, wherein at least a part of a first surface ofthe pad is exposed through a through hole completely extending throughthe light condensing layer and the semiconductor layer, wherein thewiring of the wiring layer is connected to a side surface of the pad. 2.The solid-state image pickup element according to claim 1, wherein thewiring of the wiring layer is connected to a second surface on a sideopposite to the first surface of the pad through a via.
 3. Thesolid-state image pickup element according to claim 1, furthercomprising: a control substrate provided with a control circuit andlaminated on a wiring layer side of the pixel substrate.
 4. Thesolid-state image pickup element according to claim 1, furthercomprising: a support substrate laminated on a wiring layer side of thepixel substrate.
 5. The solid-state image pickup element according toclaim 1, further comprising: a control substrate in which a controlcircuit is arranged and which is laminated on a wiring layer side of thepixel substrate; a first via completely extending through thesemiconductor layer to be connected to the first surface of the pad; anda second via connected to the first via in the light condensing layer,and completely extending through the semiconductor layer and the wiringlayer to be connected to a wiring of the control substrate.
 6. Thesolid-state image pickup element according to claim 1, furthercomprising: a control substrate in which a control circuit is arrangedand which is laminated on a wiring layer side of the pixel substrate;and a via which completely extends through the semiconductor layer andthe wiring layer, and through which a side surface of the pad and awiring of the control substrate are connected to each other.
 7. Anelectronic apparatus comprising: a solid-state image pickup element; anda signal processing portion for processing a signal output from thesolid-state image pickup element, the solid-state image pickup elementincluding a pixel substrate including a light condensing layer forcondensing incident light on a photoelectric conversion element, asemiconductor layer in which the photoelectric conversion element isformed, and a wiring layer in which a wiring and a pad for outsideconnection are laminated on one another, wherein at least a part of afirst surface of the pad is exposed through a through hole completelyextending through the light condensing layer and the semiconductorlayer, wherein the wiring of the wiring layer is connected to a sidesurface of the pad.
 8. A light detecting device comprising: a pixelsubstrate including a light condensing layer, a first semiconductorlayer including a plurality of photoelectric conversion elements, and afirst wiring layer including a pad for external connection, a wiring,and a first plurality of electrically conductive components; and acontrol substrate including a second semiconductor layer including acontrol circuit and a second wiring layer including a second pluralityof electrically conductive components; wherein the pixel substrate andthe control substrate are bonded such that the first wiring layer andthe second wiring layer face each other, wherein a first electricallyconductive component of the first plurality of electrically conductivecomponents and a second electrically conductive component of the secondplurality of electrically conductive components are bonded to eachother, wherein at least a part of a first surface of the pad is exposedthrough a hole extending through the light condensing layer and thefirst semiconductor layer, and wherein a second surface opposite to thefirst surface of the pad is connected to at least one of the firstplurality of electrically conductive components through the wiring ofthe first wiring layer.
 9. The light detecting device according to claim8, wherein the wiring of the first wiring layer is connected to a thirdsurface of the pad.
 10. The light detecting device according to claim 8,wherein the light condensing layer includes an on-chip microlens and acolor filter.
 11. The light detecting device according to claim 10,wherein the pad is formed in a region opposite to a region where theon-chip microlens and the color filter are formed.
 12. The lightdetecting device according to claim 8, further comprising a plurality ofpixel transistors.
 13. The light detecting device according to claim 12,wherein the plurality of pixel transistors includes a transfertransistor, a reset transistor, an amplification transistor, and aselect transistor.
 14. The light detecting device according to claim 8,wherein the first and second electrically conductive components includeCu.
 15. The light detecting device according to claim 8, wherein the padincludes Al.
 16. The light detecting device according to claim 8,wherein the first surface of the pad is a light receiving surface sideof the pixel substrate.
 17. The light detecting device according toclaim 16, wherein a depth of the hole between the light receivingsurface side of the pixel substrate and the pad is about 10 μm.
 18. Thelight detecting device according to claim 8, wherein the first andsecond wiring layers each includes multiple layers.
 19. The lightdetecting device according to claim 8, wherein the pad has a form of ageometric shape.
 20. The light detecting device according to claim 8,wherein a height of the pad is below a height of the first wiring layerin a vertical direction.